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2SC3326

Part Number	2SC3326
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3326 For Muting and Switching Applications 2SC3326 Unit:...
Datasheet	2SC3326 PDF File

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3326 For Muting and Switching Applications 2SC3326 Unit: mm  AEC-Q101 Qualified (Note1).
 High emitter-base voltage: VEBO = 25 V  High reverse hFE: Reverse hFE = 150 (typ.
) (VCE = −2 V, IC = −4 mA)  Low on resistance: RON = 1 Ω (typ.
) (IB = 5 mA)  High DC current gain: hFE = 200 to 1200  Small package Note1: For detail information, please contact our sales.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO 50 V ...

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