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CEJ8218

Part Number	CEJ8218
Manufacturer	CET
Description	Dual N-Channel Enhancement Mode Field Effect Transistor
Published	Mar 5, 2012
Detailed Description	www.DataSheet.co.kr Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6.5A, RDS(ON) = 23mΩ @VGS = 4...
Datasheet	CEJ8218 PDF File

Overview

www.
DataSheet.
co.
kr Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6.
5A, RDS(ON) = 23mΩ @VGS = 4.
5V.
RDS(ON) = 34mΩ @VGS = 2.
5V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
S1 *Typical value by design G1 *1K D CEJ8218 D G2 *1K S2 D 8 D 7 D 6 D 5 2928-8J 1 2 3 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 20 Units V V A A W C ±12 6.
5 25 1.
5 -55 to 150 Maximum Power Dissipation Operating and Store Temperatu...

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CEJ8218 Dual N-Channel Enhancement Mode Field Effect Transistor - CET

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