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FMV11N60E

Part Number	FMV11N60E
Manufacturer	Fuji Electric
Description	N-CHANNEL SILICON POWER MOSFET
Published	Mar 7, 2012
Detailed Description	www.DataSheet.co.kr FMV11N60E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) c...
Datasheet	FMV11N60E PDF File

Overview

www.
DataSheet.
co.
kr FMV11N60E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.
0±0.
5V) High avalanche durability TO-220F(SLS) FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise speciﬁed) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol ...

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