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SQ3426EEV

Vishay
Part Number SQ3426EEV
Manufacturer Vishay
Description Automotive N-Channel MOSFET
Published Mar 7, 2012
Detailed Description www.DataSheet.co.kr SQ3426EEV www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT S...
Datasheet PDF File SQ3426EEV PDF File

SQ3426EEV
SQ3426EEV

Overview
www.
DataSheet.
co.
kr SQ3426EEV www.
vishay.
com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.
5 V ID (A) Configuration TSOP-6 Top V iew 1 6 FEATURES 60 0.
045 0.
066 7 Single (1, 2, 5, 6) D • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Typical ESD Protection 800 V • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC 3 mm 2 5 (3) G 3 4 2.
85 mm Marking Code: 8Axxx (4) S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free TSOP-6 SQ3426EEV-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) Pulsed Drain Currenta L = 0.
1 mH TC = 25 °C TC = 125 °C Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C SYMBOL VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 60 ± 20 7 4 6 29 10 5 5 1.
6 - 55 to + 175 mJ W °C A UNIT V THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a.
Pulse test; pulse width  300 μs, duty cycle  2 %.
b.
When mounted on 1" square PCB (FR-4 material).
c.
Parametric verification ongoing.
PCB Mountb SYMBOL RthJA RthJF LIMIT 110 30 UNIT °C/W S11-2124-Rev.
C, 07-Nov-11 1 Document Number: 65351 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.
vishay.
com/doc?91000 Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr SQ3426EEV www.
vishay.
com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS(th) IGSS VGS = 0, ID = 250 μA VDS = VGS, ID = 250 μA VDS = 0 V, ...


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