Transistors
2SC3811
Silicon NPN epitaxial planar type
For high-speed switching
■ Features Low collector-emitter saturation voltage VCE(sat)
5.0±0.2
Unit: mm 4.0±0.2
5.1±0.2
0.7±0.2 12.9±0.5
0.7±0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
/ Collector-base voltage (Emitter open) VCBO
40
V
0.45+–00..115
0.45+–00..115
...
