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R6010ANX

Rohm
Part Number R6010ANX
Manufacturer Rohm
Description Drive Nch MOSFET
Published Apr 3, 2012
Detailed Description Data Sheet 10V Drive Nch MOSFET R6010ANX  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TO-220FM 10.0 φ3...
Datasheet PDF File R6010ANX PDF File

R6010ANX
R6010ANX

Overview
Data Sheet 10V Drive Nch MOSFET R6010ANX  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TO-220FM 10.
0 φ3.
2 4.
5 2.
8 Features 1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
15.
0 12.
0 8.
0 14.
0 2.
5 1.
3 1.
2 0.
8 (1) Gate (2) Drain (3) Source 2.
54 (1) (2) (3) 2.
54 0.
75 2.
6  Application Switching  Packaging specifications Type R6010ANX Package Code Basic ordering unit (pieces) Bulk 500  www.
DataSheet.
co.
kr  Inner circuit ∗1  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25 , Starting, T ch=25C (1) Gate (2) Drain (3) Source (1) (2) (3) 1 BODY DIODE Limits 600 30 10 40 10 40 5 6.
5 50 150 55 to ...


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