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BGF127

Infineon
Part Number BGF127
Manufacturer Infineon
Description Low Capacitance ESD protection array
Published Apr 10, 2012
Detailed Description BGF127 Low Capacitance ESD protection array • 8-channel ESD protection according to: IEC61000-4-2 (ESD): ± 25 kV (contac...
Datasheet PDF File BGF127 PDF File

BGF127
BGF127

Overview
BGF127 Low Capacitance ESD protection array • 8-channel ESD protection according to: IEC61000-4-2 (ESD): ± 25 kV (contact) • Max.
working voltage: 5.
3 V • Very low capacitance < 1.
0 pF typ.
• Very low reverse current < 1 nA typ.
• Wafer level package with SnAgCu solder balls BGF127 A1 A2 A3 B1 B3 C1 C2 C3 B2 www.
DataSheet.
co.
kr Type BGF127 Parameter Package WLP-9-1 Configuration 8 channels, uni-directional Symbol VESD T op T stg Value ± 25 Marking 27 Unit Maximum Ratings at TA = 25°C, unless otherwise specified ESD contact discharge1) Operating temperature range Storage temperature 1V kV °C -30.
.
.
85 -55.
.
.
150 ESD according to IEC61000-4-2 1 2009-08-20 Datasheet pdf - http://www.
DataSheet4U.
net/ BGF127 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min.
Characteristics typ.
max.
Unit Reverse working voltage Breakdown voltage I(BR) = 1 mA VRWM V(BR) IR VCL 6 - <1 5.
3 10 V Reverse current VR = 5.
3 V nA V Clamping voltage IPP = 1 A, tp = 8/20 µs1) IPP = 6 A, tp = 8/20 µs1) VFC 9.
9 17 1.
8 5.
6 0.
9 0.
01 1 pF 1.
5 Ω Forward clamping voltage IPP = 1 A, tp = 8/20 µs1) IPP = 6 A, tp = 8/20 µs1) CT Line capacitance2) VR = 3 V, f = 1 MHz www.
DataSheet.
co.
kr Capacitance variation between the 8 channels Dynamic resistance ( tp=30ns ) 1I RD - pp according to IEC61000-4-5 2Total capacitance line to ground 2 2009-08-20 Datasheet pdf - http://www.
DataSheet4U.
net/ BGF127 Reverse current IR = ƒ (TA) VR = Parameter 10 -7 Breakdown voltage V BR = ƒ(T A) IR = 1mA 10 V A 9 V BR °C 10 -8 IR 8.
5 8 10 -9 7.
5 7 6.
5 10 -10 0 25 50 75 100 150 6 -50 -25 0 25 50 75 100 °C 150 TA www.
DataSheet.
co.
kr TA Line capacitance CT = ƒ (VR) f = 1MHz Change of Line capacitance CT(VR) / CT(0V) = f (VR) f = 1 MHz 10 % 1.
5 pF CT(VR)/CT (0V) V 1.
2 1.
1 1 6 4 2 0 -2 -4 -6 -8 -10 0 V CT 0.
9 0.
8 0.
7 0.
6 0.
5 0.
4 0.
3 0.
2 0.
1 0 0 1 2 3 4 6 1 2 3 4 6 VR VR 3 2009-08-20 Datasheet pdf - http://ww...


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