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RJK1008DPP

Renesas
Part Number RJK1008DPP
Manufacturer Renesas
Description N-Channel Power MOSFET
Published May 2, 2012
Detailed Description RJK1008DPP N-Channel Power MOSFET High-Speed Switching Use REJ03G1708-0100 Rev.1.00 Jul 03, 2008 Features • VDSS : 100 ...
Datasheet PDF File RJK1008DPP PDF File

RJK1008DPP
RJK1008DPP

Overview
RJK1008DPP N-Channel Power MOSFET High-Speed Switching Use REJ03G1708-0100 Rev.
1.
00 Jul 03, 2008 Features • VDSS : 100 V • RDS(on) : 11 mΩ (Max) • ID : 80 A Outline RENESAS Package code: PRSS0003AB-A (Package name : TO-220FN) 2 1 1.
Gate 2.
Drain 3.
Source 1 2 3 3 www.
DataSheet.
co.
kr Application • Motor control, Lighting control, Solenoid control, DC-DC converter, etc.
Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
Value at Tc = 25°C 2.
STch = 25°C, Tch ≤ 150°C, L = 100 µH Symbol VDSS VGSS ID ID (pulse) IDR IDR (pulse) IAP Note2 Pch Note1 θch-c Tch Tstg Ratings 100 ±20 80 160 80 160 40 45 2.
78 150 –55 to +150 Unit V V A A A A A W °C/W °C °C REJ03G1708-0100 Rev.
1.
00 Jul 03, 2008 Page 1 of 6 Datasheet pdf - http://www.
DataSheet4U.
net/ RJK1008DPP Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 3.
Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) VDS(on) RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 100 — — 2.
0 — — — — — — — — — — — Typ — — — 3.
0 0.
34 8.
5 5200 820 220 52 100 230 125 0.
9 70 Max — 100 ±0.
1 4.
0 0.
44 11 — — — — — — — 1.
5 — Unit V µA µA V V mΩ pF pF pF ns ns ns ns V ns Test conditions ID = 1 mA, VGS = 0 VDS = 100 V, VGS = 0 VGS = ±20 V, VDS = 0 ID = 1 mA, VDS = 10 V Note3 ID = 40 A, VGS = 10 V Note3 ID = 40 A, VGS = 10 V Note3 VDS = 10 V VGS = 0 f = 1 MHz VDD = 50 V...


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