Preliminary Datasheet
RJL5012DPE
Silicon N Channel MOS FET High Speed Power Switching
Features
Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching
R07DS0435EJ0200 (Previous: REJ03G1745-0100) Rev.2.00 Jun 14, 2011
Outline
RENESAS Package code: PRSS0004AE...
