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RJL6013DPE

N-Channel Power MOSFET

Description

Preliminary Datasheet RJL6013DPE Silicon N Channel MOS FET High Speed Power Switching Features  Built-in fast recovery diode  Low on-resistance RDS(on) = 0.66  typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching R07DS0437EJ0200 (Previous: REJ03G1748-0100) Rev.2.00 Jun 16, 2011 Outline RENESAS Package code: PRSS0004A...

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