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RJP30E2DPK-M0

Renesas
Part Number RJP30E2DPK-M0
Manufacturer Renesas
Description N-Channel Power MOSFET
Published May 2, 2012
Detailed Description Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching Features • • • • Trench gate tech...
Datasheet PDF File RJP30E2DPK-M0 PDF File

RJP30E2DPK-M0
RJP30E2DPK-M0

Overview
Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching Features • • • • Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.
7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max R07DS0348EJ0100 Rev.
1.
00 Apr 12, 2011 Outline RENESAS Package code: PRSS0004ZH-A (Package name: TO-3PSG) C 4 G 1.
Gate 2.
Collector 3.
Emitter 4.
Collector (Flange) E 1 2 3 Absolute Maximum Ratings Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1.
PW ≤ 10 μs, d...


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