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RJP30E2DPP-M0

Part Number	RJP30E2DPP-M0
Manufacturer	Renesas
Description	N-Channel Power MOSFET
Published	May 2, 2012
Detailed Description	Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • • • • • Trench gate te...
Datasheet	RJP30E2DPP-M0 PDF File

Overview

Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • • • • • Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.
7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max Isolated package TO-220FL R07DS0347EJ0200 Rev.
2.
00 Apr 12, 2011 Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) C G 1.
Gate 2.
Collector 3.
Emitter 1 2 3 E www.
DataSheet.
co.
kr Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Stor...

Similar Datasheet

RJP30E2DPP-M0 N-Channel Power MOSFET - Renesas

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