DatasheetsPDF.com

RJP6065DPM

Part Number	RJP6065DPM
Manufacturer	Renesas
Description	N-Channel IGBT
Published	May 2, 2012
Detailed Description	Preliminary Datasheet RJP6065DPM Silicon N Channel IGBT High Speed Power Switching Features  Low collector to emitter ...
Datasheet	RJP6065DPM PDF File

Overview

Preliminary Datasheet RJP6065DPM Silicon N Channel IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.
8 V typ.
(IC = 40 A, VGE = 15V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating and chip bonding R07DS0204EJ0100 Rev.
1.
00 Nov 19, 2010 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C G 1.
Gate 2.
Collector 3.
Emitter E 1 2 3 www.
DataSheet.
co.
kr Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1.
Pulse w...

Similar Datasheet

RJP6065DPM N-Channel IGBT - Renesas

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)