N-Channel IGBT
Description
Preliminary Datasheet
RJP60F4DPM
600 V - 30 A - IGBT High Speed Power Switching
Features
Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C) Trench gate and thin wafer technology High speed switching R07DS0586EJ0100 Rev.1.00 Nov 25, 2011
Outline
RENESAS Package code: PRSS0003ZA-A (Package name: TO-3P...
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