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RJP63F3DPP-M0

Part Number	RJP63F3DPP-M0
Manufacturer	Renesas
Description	N-Channel IGBT
Published	May 2, 2012
Detailed Description	Preliminary Datasheet RJP63F3DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • • • • • Trench gate an...
Datasheet	RJP63F3DPP-M0 PDF File

Overview

Preliminary Datasheet RJP63F3DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • • • • • Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.
7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 μA max Isolated package TO-220FL R07DS0321EJ0200 Rev.
2.
00 May 26, 2011 Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) C G 1.
Gate 2.
Collector 3.
Emitter 1 2 3 E www.
DataSheet.
co.
kr Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction t...

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RJP63F3DPP-M0 N-Channel IGBT - Renesas

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