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AM2392N

Analog Power
Part Number AM2392N
Manufacturer Analog Power
Description N-Channel 150-V (D-S) MOSFET
Published May 14, 2012
Detailed Description Analog Power N-Channel 150V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench proces...
Datasheet PDF File AM2392N PDF File

AM2392N
AM2392N

Overview
Analog Power N-Channel 150V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
AM2392N PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 2.
6 @ VGS = 10 V 150 2.
8 @ VGS = 5.
5V ID (A) 0.
6 0.
5 • • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-23 saves board space Fast switching speed High performance trench technology G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Symbol Maximum Units Parameter VDS Drain-Source Voltage 150 V Gate-Source Voltage VGS ±20 www.
DataSheet.
co.
kr o Continuous Drain Current Pulsed Drain Current Power Dissipation a b a o TA=25 C ID 0.
6 ±10 1.
1 1.
30 IDM a o A A W o Continuous Source Current (Diode Conduction) IS TA=25 C P D Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol RthJA Typ 93 130 Max 110 150 o t <= 10 sec Steady State C/W Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM2392_A Datasheet pdf - http://www.
DataSheet4U.
net/ Analog Power AM2392N SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentA Drain-Source On-ResistanceA Forward TranconductanceA Diode Forward Voltage VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±8 V o Symbol Test Conditions Limits Unit Min Typ Max 1 ±25 o V µA µA A VDS = 120 V, VGS = 0 V VDS = 120 V, VGS = 0 V, TJ = 55 C 1 10 10 2.
6 2.
8 11.
3 0.
75 7 1.
1 ...


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