Silicon NPN Power Transistors
Description
isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·High Power Dissipation-
: PC= 80W(Max)@TC=25℃ ·Complement to Type 2SB557 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 50W high-fidelity aud...
Inchange Semiconductor
2SD427 PDF File
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