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CGHV96100F2

CREE
Part Number CGHV96100F2
Manufacturer CREE
Description Input/Output Matched GaN HEMT / Power Amplifer
Published Jun 13, 2012
Detailed Description CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium...
Datasheet PDF File CGHV96100F2 PDF File

CGHV96100F2
CGHV96100F2

Overview
CGHV96100F2 100 W, 7.
9 - 9.
6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates.
This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies.
GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors.
This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal perfo...


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