Silicon N Channel MOS FET
Description
Preliminary Datasheet
RJL6032DPP-M0
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-state resistance RDS(on) = 3.3 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) High speed switching Built in fast recovery diode R07DS0250EJ0100 Rev.1.00 Jan 27, 2010
Outline
RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL)
D
G
1. Gate 2....
Similar Datasheet
