IGBT
Description
Preliminary Datasheet
RJH60F6BDPQ-A0
600V - 45A - IGBT High Speed Power Switching
Features
Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15...
Similar Datasheet
- RJH60F6BDPQ-A0 IGBT - Renesas
