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RJP65S06DWA

Renesas
Part Number RJP65S06DWA
Manufacturer Renesas
Description IGBT
Published Jul 21, 2012
Detailed Description Preliminary Datasheet RJP65S06DWT/RJP65S06DWA 650V - 100A - IGBT Application: Inverter Features  Low collector to emit...
Datasheet PDF File RJP65S06DWA PDF File

RJP65S06DWA
RJP65S06DWA

Overview
Preliminary Datasheet RJP65S06DWT/RJP65S06DWA 650V - 100A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.
6 V typ.
(at IC = 100 A, VGE = 15 V, Ta = 25C)  High speed Switching  Short circuit withstands time (10 s min.
) R07DS0823EJ0001 Rev.
0.
01 Jul 05, 2012 Outline Die: RJP65S06DWT-80 2 C 3 Wafer: RJP65S06DWA-80 2 1G 1 3 1.
Gate 2.
Collector (The back) 3.
Emitter E 3 3 www.
DataSheet.
net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Junction temperature Symbol VCES VGES IC Note1 IC Note1 Tj Ratings 650 ±30 200 100 150 Unit V V A A C Notes: ...


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