IGBT
Description
Preliminary Datasheet
RJP65S07DWT/RJP65S07DWA
650V - 150A - IGBT Application: Inverter
Features
Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 150 A, VGE = 15 V, Ta = 25C) High speed Switching Short circuit withstands time (10 s min.) R07DS0824EJ0001 Rev.0.01 Jul 05, 2012
Outline
Die: RJP65S07DWT-80
2 C
Wafer: RJP65S07...
Similar Datasheet
- RJP65S07DWA IGBT - Renesas
- RJP65S07DWT IGBT - Renesas