IGBT
Description
Preliminary Datasheet
RJP65S08DWT/RJP65S08DWA
650V - 200A - IGBT Application: Inverter
Features
Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25C) High speed Switching Short circuit withstands time (10 s min.) R07DS0825EJ0001 Rev.0.01 Jul 05, 2012
Outline
Die: RJP65S08DWT-80
2 C
Wafer: RJP65S08...
Similar Datasheet
- RJP65S08DWA IGBT - Renesas
- RJP65S08DWT IGBT - Renesas