IGBT
Description
Preliminary Datasheet
RJP1CS03DWT/RJP1CS03DWA
1250V - 30A - IGBT Application: Inverter
Features
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) High speed switching Short circuit withstands time (10 s min.) R07DS0826EJ0001 Rev.0.01 Jul 03, 2012
Outline
Die: RJP1CS03DWT-80
2 C 3 1G 1
Wafer: RJP...
Similar Datasheet
- RJP1CS03DWA IGBT - Renesas
- RJP1CS03DWT IGBT - Renesas