IGBT
Description
Preliminary Datasheet
RJP1CS05DWT/RJP1CS05DWA
1250V - 75A - IGBT Application: Inverter
Features
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25C) High speed switching Short circuit withstands time (10 s min.) R07DS0828EJ0001 Rev.0.01 Jul 05, 2012
Outline
Die: RJP1CS05DWT-80
2 C 3
Wafer: RJP1CS0...
Similar Datasheet
- RJP1CS05DWA IGBT - Renesas
- RJP1CS05DWT IGBT - Renesas