DatasheetsPDF.com

RJH65S04DPQ-A0

Renesas
Part Number RJH65S04DPQ-A0
Manufacturer Renesas
Description IGBT
Published Jul 21, 2012
Detailed Description Preliminary Datasheet RJH65S04DPQ-A0 650V - 50A - IGBT Application: Inverter Features  Low collector to emitter satura...
Datasheet PDF File RJH65S04DPQ-A0 PDF File

RJH65S04DPQ-A0
RJH65S04DPQ-A0

Overview
Preliminary Datasheet RJH65S04DPQ-A0 650V - 50A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.
6 V typ.
(at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tf = 80 ns typ.
(at CC = 300 V, VGE = 15 V, IC = 50 A, Rg = 10 Tj = 125C, inductive load) R07DS0849EJ0001 Rev.
0.
01 Jul 06, 2012 Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 G 1.
Gate 2.
Collector 3.
Emitter 4.
Collector E 1 2 3 www.
DataSheet.
net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter volt...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)