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RD07MUS2B

Part Number	RD07MUS2B
Manufacturer	Mitsubishi Electric Semiconductor
Description	Silicon RF Power MOSFET
Published	Nov 5, 2012
Detailed Description	< Silicon RF Power MOS FET (Discrete) > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz...
Datasheet	RD07MUS2B PDF File

Overview

< Silicon RF Power MOS FET (Discrete) > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING 6.
0+/-0.
15 0.
2+/-0.
05 (0.
22) DESCRIPTION RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.
4.
6+/-0.
05 3.
3+/-0.
05 0.
8+/-0.
05 1 4.
9+/-0.
15 1.
0+/-0.
05 2 FEATURES High power gain and High Efficiency.
Typical Po Gp ηD (175MHz) 7.
2W 13.
8dB 65% (527MHz) 8W 13.
0dB 63% (870MHz) 7W 11.
5dB 58% Integrated gate protection diode.
3 (0.
25) (0.
25) INDEX MARK (Gate) 0.
2+/-0.
05 0.
9+/-0.
1 Terminal No.
1.
Drain (output) 2.
Source (GND) 3.
Gate (input) Note ( ):center value UNIT:mm APPLICATION For output...

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RD07MUS2B Silicon RF Power MOSFET - Mitsubishi Electric Semiconductor

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