DatasheetsPDF.com

RD07MVS1B

Mitsubishi Electric Semiconductor
Part Number RD07MVS1B
Manufacturer Mitsubishi Electric Semiconductor
Description Silicon RF Power MOSFET
Published Nov 5, 2012
Detailed Description < Silicon RF Power MOS FET (Discrete) > RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUT...
Datasheet PDF File RD07MVS1B PDF File

RD07MVS1B
RD07MVS1B

Overview
< Silicon RF Power MOS FET (Discrete) > RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION RD07MVS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power 4.
9+/-0.
15 1.
0+/-0.
05 6.
0+/-0.
15 0.
2+/-0.
05 amplifiers applications.
RD07MVS1B improved a drain surge than RD07MVS1 by optimizing MOSFET structure.
1 2 3.
5+/-0.
05 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ 3 INDEX MARK (Gate) (0.
22) (0.
25) (0.
25) FEATURES Pout>7W, Gp>10dB @Vdd=7.
2V,f=520MHz High Efficiency: 60%typ.
(175MHz) High Efficiency: 55%typ.
(520MHz) www.
DataSheet.
net/ 0.
2+/-0.
05 0.
9+/-0.
1 High power gain: Terminal No.
1.
Drain (output) 2.
Source (...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)