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RM1800HE-34S

Part Number	RM1800HE-34S
Manufacturer	Mitsubishi Electric Semiconductor
Description	HIGH POWER SWITCHING USE
Published	Nov 5, 2012
Detailed Description	MITSUBISHI HIGH VOLTAGE DIODE MODULE RM1800HE-34S High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE RM...
Datasheet	RM1800HE-34S PDF File

Overview

MITSUBISHI HIGH VOLTAGE DIODE MODULE RM1800HE-34S High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE RM1800HE-34S ● IF .
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1800A ● VRRM .
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1700V ● Insulated Type ● 1-element in a Pack ● AISiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm www.
DataSheet.
net/ 4-M8 NUTS 130 ±1.
0 114 ±0.
3 20.
5 K K 90 ±1.
0 74 ±0.
3 20 40 ±0.
5 A A 7 >PPS< (15) 7 (15) 61.
5 ±0.
5 24 4-φ6.
5 MOUNTING HOLES (15) 39.
5 K K 38 +1.
0 0 29.
7 LABEL 9.
3 3 125.
5 A A CIRCUIT DIAGRAM High Voltage Diode Module 85.
5 May 2009 1 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ MITSUBISHI HIGH VOLTAGE DIODE MODULE RM1800HE-34S High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VRRM VRSM VR(DC) IF IFSM I 2t Viso Tj Top Tstg Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage DC forward current (Note 1) Surge forward current Current-squared, time integration Isolation voltage Junction temperature Operating temperature Storage temperature Conditions Tj = 25 °C Tj = 25 °C Tj = 25 °C TC = 25 °C Tj = 25 °C start, tw = 8.
3 ms Half sign wave Tj = 25 °C start, tw = 8.
3 ms Half sign wave Charged part to the baseplate RMS sinusoidal, 60Hz 1min.
— — — Ratings 1700 1700 1150 1800 9600 384 6000 –40 ~ +150 –40 ~ +125 –40 ~ +125 Unit V V V A A kA2s V °C °C °C Note 1.
Continuous DC current should be limited to equal to or less than 1200A due to current capacity of internal electrodes.
ELECTRICAL CHARACTERISTICS Symbol IRRM VFM trr Irr Qrr Erec Item Repetitive reverse current Forward voltage (Note 2) VRM = VRRM IF = 1800 A VR = 750 V, IF = 1800 A di/dt = –4000 A/µs Ls=100nH, Tj = 125 °C www.
DataSheet.
net/ Conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Reverse recovery time Reverse rec...

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RM1800HE-34S HIGH POWER SWITCHING USE - Mitsubishi Electric Semiconductor

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