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2N6111

STMicroelectronics
Part Number 2N6111
Manufacturer STMicroelectronics
Description SILICON PNP SWITCHING TRANSISTORS
Published Mar 22, 2005
Detailed Description ® 2N6111 SILICON PNP SWITCHING TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s PNP TRANSISTOR APPLICATIONS: s LI...
Datasheet PDF File 2N6111 PDF File

2N6111
2N6111

Overview
® 2N6111 SILICON PNP SWITCHING TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s PNP TRANSISTOR APPLICATIONS: s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The 2N6111 is an Epitaxial-Base PNP silicon transistor in Jedec TO-220 plastic package.
It is intended for a wide variety of medium power switching and linear applications.
3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCBO Collector-Base Voltage (IE = 0) VCEX Collector-Emitter Voltage (RBE = 100 Ω) VCEO Collector-Emitter Voltage (IB = 0) VEBO Emitter-Base Voltage (IC = 0) IC Collector Current IB Base Current Ptot Total Dissipation at Tc = 25 oC Tstg Storage Temperature Tj Max.
Operating Junction Temperature December 2003 Value -40 -40 -30 -5 -7 -3 40 -65 to 150 150 Unit V V V V A A W oC oC 1/4 2N6111 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Max Max 3.
12 70 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICEX Collector Cut-off VCE = -40 V Current (VBE = - 1.
5V) VCE = -30 V TC = 150 oC ICEO Collector Cut-off Current (IB = 0) IEBO Emitter Cut-off Current (IC = 0) VCEO(sus)∗ Collector-Emitter Sustaining Voltage (IB = 0) VCER(sus)∗ Collector-Emitter Sustaining Voltage (IC = 0) VCE(sat)∗ Collector-Emitter Saturation Voltage VCE = -20 V VEB = -5 V IC = -0.
1 A IC = -0.
1 A IC = -2 A IC = -7 A RBE = 100 Ω IB = -0.
2 A IB = -3.
0 A VBE(on)∗ Base-Emitter Voltage IC = -2 A IC = -7 A VCE = -4 V VCE = -4 V hFE∗ DC Current Gain IC = -3 A IC = -7 A VCE = -4 V VCE = -4 V hfe Small Signal Current IC = -0.
5 A Gain f = 50 KHz VCE = -4 V fT Transition-Frequency IC = -0.
5 A VCE = -4 V Ccbo Collector-base Capacitance VCB = -10 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.
5 %.
f = 1 MHz Min.
Typ.
-30 -40 30 2.
3 20 4 Max.
-0.
1 -2 -1 -1 -1 -3.
5 -5 -3 150 250 Unit mA mA mA mA V V V V V V MHz pF 2/4 DIM.
...


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