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2N6199

Advanced Semiconductor
Part Number 2N6199
Manufacturer Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Published Mar 22, 2005
Detailed Description 2N6199 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N6199 is Designed for VHF Class C Power Amplifier Applica...
Datasheet PDF File 2N6199 PDF File

2N6199
2N6199

Overview
2N6199 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N6199 is Designed for VHF Class C Power Amplifier Applications up to 250 MHz.
PACKAGE STYLE .
380" 4L STUD .
112x45° A B C E ØC FEATURES: • PG = 10 dB Typical at 25 W/175 MHz • ∞ Load VSWR at Rated Conditions • Omnigold™ Metallization System D E B H I J #8-32 UNC-2A F E G MAXIMUM RATINGS IC VCB PDISS TJ TSTG θJC 4.
0 A 65 V 40 W @ TC = 25 °C -55 °C to +200 °C -55 °C to +150 °C 4.
4 °C/W DIM A B C D E F G H I J MINIMUM inches / mm MAXIMUM inches / mm .
220 / 5.
59 .
980 / 24.
89 .
370 / 9.
40 .
004 / 0.
10 .
320 / 8.
13 .
100 / 2.
54 .
450 / 11.
43 .
090 / 2.
29 .
155 / 3.
94 .
230 / 5.
84 .
385 / 9.
78 .
007 / 0.
18 .
330 / 8.
38 .
130 / 3.
30 .
490 / 12.
45 .
100 / 2.
54 .
175 / 4.
45 .
750 / 19.
05 ORDER CODE: ASI10864 CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICBO hFE Cob PG ηc TC = 25 °C TEST CONDITIONS IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5.
0 V VCB = 28 V VCE = 28 V POUT = 25 W IC = 200 mA f = 1.
0 MHz f = 175 MHz MINIMUM TYPICAL MAXIMUM 65 35 4.
0 2.
0 10 50 8.
5 50 10 60 UNITS V V V mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
REV.
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