Silicon NPN Darlington Power Transistor
Description
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= 4A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 2.0V(Max)@ IC= 4A ·Complement to Type TIP135 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
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