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2N6519

Fairchild Semiconductor
Part Number 2N6519
Manufacturer Fairchild Semiconductor
Description PNP Epitaxial Silicon Transistor
Published Mar 22, 2005
Detailed Description 2N6519 2N6519 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -300V • Collector Dissipation: PC (max)=625mW ...
Datasheet PDF File 2N6519 PDF File

2N6519
2N6519

Overview
2N6519 2N6519 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -300V • Collector Dissipation: PC (max)=625mW TO-92 1 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Derate above 25°C Junction Temperature Storage Temperature 1.
Emitter 2.
Base 3.
Collector Value -300 -300 -5 -500 -250 625 5 150 -55 ~ 150 Units V V V mA mA W mW/°C °C °C • Refer to 2N6520 for graphs Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE Parameter Collector-Base Breakdown Voltage * Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Test Condition IC= -100µA, IE=0 IC= -1mA, IB=0 IE= -10µA, IC=0 VCB= -200V, IE=0 VEB= -4V, IC=0 VCE= -10V, IC= -1mA VCE= -10V, IC= -10mA VCE= -10V, IC= -30mA VCE= -10V, IC= -50mA VCE= -10V, IC= -100mA IC= -10mA, IB= -1mA IC= -20mA, IB= -2mA IC= -30mA, IB= -3mA IC= -50mA, IB= -5mA IC= -10mA, IB= -1mA IC= -20mA, IB= -2mA IC= -30mA, IB= -3mA VCE= -10V, IC= -100mA VCE= -20V, IC= -10mA, f=20MHz VCB= -20V, IE=0, f=1MHz VEB= -0.
5V, IC=0, f=1MHz VBE (off)= -2V, VCC= -100V IC= -50mA, IB1= -10mA 40 30 45 45 40 20 Min.
-300 -300 -5 -50 -50 Max.
Units V V V nA nA 270 200 -0.
30 -0.
35 -0.
50 -1 -0.
75 -0.
85 -0.
90 -2 200 6 100 200 V V V V V V V V MHz pF pF ns VCE (sat) Collector-Emitter Saturation Voltage VBE (sat) Base-Emitter Saturation Voltage VBE (on) fT Cob CEB tON Base-Emitter On Voltage * Current Gain Bandwidth Product Output Capacitance Emitter-Base Capacitance Turn On Time tOFF Turn Off Time VCC= -100V, IC= -50mA IB1=IB2=10mA 3.
5 ns * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ©2003 Fairchild Semiconductor Corporation Rev.
B2, Jnauary 2003 2N6519 Package Dimensions TO-92 4.
58 –0.
15 +0.
25 0.
4...


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