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IDW16G65C5

Infineon Technologies
Part Number IDW16G65C5
Manufacturer Infineon Technologies
Description SiC Schottky Barrier diodes
Published Mar 22, 2013
Detailed Description SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDW16G65C5 Final Datasheet Rev. 2.2, 2013-01-1...
Datasheet PDF File IDW16G65C5 PDF File

IDW16G65C5
IDW16G65C5

Overview
SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDW16G65C5 Final Datasheet Rev.
2.
2, 2013-01-15 Power Management & Multimarket 5th Generation thinQ!™ SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.
Features  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant  Qualified acco...


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