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NGTB15N60S1EG

ON Semiconductor
Part Number NGTB15N60S1EG
Manufacturer ON Semiconductor
Description IGBT
Published May 26, 2013
Detailed Description NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effec...
Datasheet PDF File NGTB15N60S1EG PDF File

NGTB15N60S1EG
NGTB15N60S1EG

Overview
NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications.
Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications.
Incorporated into the device is a rugged co−packaged reverse recovery diode with a low forward voltage.
Features • Low Saturation Voltage Resulting in Low Conduction Loss • Low Switching Loss in Higher Frequency Applications • Soft Fast Reverse Recovery Diode • 5 ms Short Circuit Capability • Excellent Curre...


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