DatasheetsPDF.com

GP4435

GTM
Part Number GP4435
Manufacturer GTM
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Jul 29, 2013
Detailed Description Pb Free Plating Product ISSUED DATE :2005/03/02 REVISED DATE : GP4435 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RD...
Datasheet PDF File GP4435 PDF File

GP4435
GP4435

Overview
Pb Free Plating Product ISSUED DATE :2005/03/02 REVISED DATE : GP4435 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 20m -9A The GP4435 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
*Simple Drive Requirement *Lower On-resistance *Fast Switching Description Features Package Dimensions D GAUGE PLANE E REF.
A A1 A2 b b1 b2 b3 c A Millimeter Min.
Max.
0.
381 2.
921 0.
356 0.
356 1.
143 0.
762 0.
203 0.
5334 4.
953 0.
559 0.
508 1.
778 1.
143 0.
356 REF.
c1 D E E1 e HE L Millimeter Min.
Max.
0.
203 0.
279 9.
017 10.
16 6.
096 7.
112 7.
620 8.
255 2.
540 BSC 10.
92 2.
921 3.
810 SEATING PLANE Z Z b L SECTION Z - Z b e DIP-8 c http://www.
DataSheet4U.
com/ Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings -30 20 -9 -5.
8 -50 2.
5 0.
02 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max.
Rthj-amb Value 50 Unit /W GP4435 Page: 1/4 ISSUED DATE :2005/03/02 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min.
-30 -1.
0 http://www.
DataSheet4U.
com/ Symbol BVDSS BVDSS / Tj Typ.
-0.
03 8.
2 26 6 16 14 13 70 48 Max.
-3.
0 100 -1 -25 20 35 42 2100 - Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=-250uA Reference to 25 , ID=-1mA VDS=VGS, ID=-250uA VDS=-10V, ID=-9A VGS= 20V Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) VGS(th) gfs IGSS IDSS VDS=-30V, VGS=0 VDS=-24V, VGS=0 VGS=-10V, ID=-9A VGS=-4.
5V, ID=-5A ID=-9A VDS=-24V VGS=-4.
5V VDS=-15V ID=-1A VGS=-10V...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)