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2SA1020

Toshiba Semiconductor

PNP Transistor


Description
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Power Switching Applications Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) High collector power dissipation: PC = 900 mW High-speed switching: tstg = 1.0 μs (typ.) Complementary to 2SC2655 2SA1020 Unit: mm Absolute Maximum Ratin...



Toshiba Semiconductor

2SA1020

PDF File 2SA1020 PDF File


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