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2SA1096

Panasonic Semiconductor
Part Number 2SA1096
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Mar 22, 2005
Detailed Description Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification C...
Datasheet PDF File 2SA1096 PDF File

2SA1096
2SA1096

Overview
Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1096 and 2SA1096A I Features • High collector to emitter voltage VCEO • TO-126B package which requires no insulation plate for installation to the heat sink 8.
0+0.
5 –0.
1 φ 3.
16±0.
1 3.
8±0.
3 11.
0±0.
5 3.
2±0.
2 1.
9±0.
1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage 2SC2497 2SC2497A VEBO ICP IC PC Tj Tstg Symbol VCBO VCEO Rating 70 50 60 5 3 1.
5 1.
2 *1 5 *2 Junction temperature Storage temperature 150 −55 to +150 °C °C V A A W Unit V V 1 2 0.
75±0.
1 4.
6±0.
2 0.
5±0.
1 0.
5±0.
1 2.
3±0.
2 3 1.
76±0.
1 16.
0±1.
0 Emitter to base voltage Peak collector current Collector current Collector power dissipation 1 : Emitter 2 : Collector 3 : Base TO-126B-A1 Package Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink I Electrical Characteristics TC = 25°C Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SC2497 2SC2497A hFE VCE(sat) VBE(sat) fT Cob VCE = 5 V, IC = 1 A IC = 1.
5 A, IB = 0.
15 A IC = 1.
5 A, IB = 0.
15 A VCB = 5 V, IE = − 0.
5 A, f = 200 MHz VCB = 20 V, IE = 0, f = 1 MHz 150 35 IEBO VCBO VCEO Conditions VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VEB = 5 V, IC = 0 IC = 1 mA, IE = 0 IC = 2 mA, IB = 0 70 50 60 80 220 1 1.
5 V V MHz pF Min Typ Max 1 100 10 Unit µA µA µA V V Forward current transfer ratio * Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Note) *: Rank classification Rank hFE R 80 to 160 S 120 to 220 188 3.
05±0.
1 Power Transistors PC  T a 6 2SC2497, 2SC2497A IC  VCE Collector to emitter saturation voltage VCE(sat) (V) 4.
0 TC=25˚C 3.
5 10 VCE(sat)  IC IC/IB=10 Collector power dissipation PC (W) 5 (1)With a 100×100×2mm Al heat sink (2)Without heat sink Collector current IC (A) 3.
0 2.
5 2.
0 1.
5 1.
0 ...


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