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SIS456DN

Vishay
Part Number SIS456DN
Manufacturer Vishay
Description N-Channel MOSFET
Published Aug 8, 2013
Detailed Description SiS456DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0051 at VGS = 10 V 0.006...
Datasheet PDF File SIS456DN PDF File

SIS456DN
SIS456DN

Overview
SiS456DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.
0051 at VGS = 10 V 0.
0068 at VGS = 4.
5 V ID (A)a 35 35 Qg (Typ.
) 18.
5 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC PowerPAK® 1212-8 3.
30 mm S 1 2 3 S S 3.
30 mm APPLICATIONS • DC/DC Converter - Notebook - POL G D G 4 D 8 7 6 5 D D D Bottom View Ordering Information: SiS456DN-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Avalanche Current Avalanche Energy Continuous Source-Drain Diode Current L = 0.
1 mH TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperatur...


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