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FDMS86520

Fairchild Semiconductor
Part Number FDMS86520
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Aug 8, 2013
Detailed Description FDMS86520 N-Channel PowerTrench® MOSFET FDMS86520 N-Channel PowerTrench® MOSFET 60 V, 42 A, 7.4 mΩ Features „ Max rDS(o...
Datasheet PDF File FDMS86520 PDF File

FDMS86520
FDMS86520

Overview
FDMS86520 N-Channel PowerTrench® MOSFET FDMS86520 N-Channel PowerTrench® MOSFET 60 V, 42 A, 7.
4 mΩ Features „ Max rDS(on) = 7.
4 mΩ at VGS = 10 V, ID = 14 A „ Max rDS(on) = 10.
3 mΩ at VGS = 8 V, ID = 12.
5 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant October 2014 General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Applications „ Primary DC-DC Switch „ Motor Bridge Switch „ Synchronous Rectifier Top Bottom Pin 1 S S S D S G S D Power 56 D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics S G (Note 1a) (Note 3) (Note 1a) D D Ratings 60 ±20 42 14 80 86 69 2.
5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 1.
8 (Note 1a) 50 °C/W Device Marking FDMS86520 Device FDMS86520 Package Power 56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2013 Fairchild Semiconductor Corporation 1 FDMS86520 Rev.
C3 www.
fairchildsemi.
com FDMS86520 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDS...


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