AON5810 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AON5810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bidirecti...
