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LE28DW3212AT-80B

Part Number	LE28DW3212AT-80B
Manufacturer	Sanyo
Description	32 Megabit FlashBank Memory
Published	Aug 19, 2013
Detailed Description	32 Megabit FlashBank Memory LE28DW3212AT-80B FEATURES: 1 Sp ec ifi ca tio ns • • • • • • • • • Single 3.0-Volt Read a...
Datasheet	LE28DW3212AT-80B PDF File

Overview

32 Megabit FlashBank Memory LE28DW3212AT-80B FEATURES: 1 Sp ec ifi ca tio ns • • • • • • • • • Single 3.
0-Volt Read and Write Operations • Separate Memory Banks by Address Space – Bank1: 16Mbit (1024K x 16 / 2048K x 8) Flash – Bank2: 16Mbit (1024K x 16 / 2048K x 8) Flash – Simultaneous Read and Write Capability Read Access Time – 80 ns Latched Address and Data End of Write Detection – Toggle Bit / Data # Polling / RY/BY# Write Protection by WP# pin Flash Bank: Two Small Erase Element Sizes – 2K Words per Sector or 32K Words per Block – Erase either element before Word Program CMOS I/O Compatibility Packages Available – 48-Pin TSOP (12mm x 20mm) Continuous Hardware and Software Data Protection (SDP) • Superior Reliability – Endurance: 10,000 Cycles 100,000 Cycles (Sector Erase) – Data Retention: 10 years • Low Power Consumption – – – – Active Current, Read: Active Current, Read & Write: Standby Current: Auto Low Power Mode Current: 10 mA (typical) 30 mA (typical) 5µA (typical) 5µA (typical) • Fast Write Operation – Chip Erase + Program: – Block Erase + Program: – Sector Erase + Program: 30 sec (typical) 500 ms (typical) 45 ms (typical) Product Description The LE28DW3212AT consists of two memory banks, 2 each contains of 1024K x 16 bits or 2048K x 8 sector mode flash EEPROM manufactured with SANYO's proprietary, high performance FlashTechnology.
The LE28DW3212AT writes with a 3.
0-volt-only power supply.
The LE28DW3212AT is divided into two separate memory banks.
Each Flash Bank is typically used for program storage and contains 512 sectors of 2K words or 32blocks of 32K words.
Any bank may be used for executing code while writing data to a different bank.
Each memory bank is controlled by separate Bank selection address (A20) lines.
LE28DW3212AT inherently uses less energy during Erase, and Program than alternative flash technologies.
The total energy consumed is a function of the applied voltage, current, and time of application.
Since for any given voltage ...

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LE28DW3212AT-80B 32 Megabit FlashBank Memory - Sanyo

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