DatasheetsPDF.com

AP09N70P-H

Advanced Power Electronics
Part Number AP09N70P-H
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Aug 20, 2013
Detailed Description AP09N70P/R-H RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Rated ▼ Fast Switching Characteri...
Datasheet PDF File AP09N70P-H PDF File

AP09N70P-H
AP09N70P-H

Overview
AP09N70P/R-H RoHS-compliant Product Advanced Power Electronics Corp.
▼ 100% Avalanche Rated ▼ Fast Switching Characteristics ▼ Simple Drive Requirement G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 700V 0.
85Ω 8.
3A Description G AP09N70 series are specially designed as main switching devices for D S universal 90~265VAC off-line AC/DC converter applications.
The TO-262 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness.
The TO-220 and TO-262 package is widely preferred for all commercialindustrial applications.
The device is suited for switch mode power supplies, DC-AC converters and high current high speed switching circuits.
TO-220(P) G D S TO-262(R) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 700 +30 8.
3 5.
2 40 156 2 Units V V A A A W mJ A mJ ℃ ℃ Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 32 8 32 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.
8 62 Unit ℃/W ℃/W 1 200912283 Data & specifications subject to change without notice Free Datasheet http://www.
datasheet4u.
com/ AP09N70P/R-H Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o o Test Conditions VGS=0V, ID=250uA 3 Min.
700 2 - Typ.
4.
5 44 11 12 19 21 56 24 2660 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)