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AP09N70R-A-HF

Advanced Power Electronics
Part Number AP09N70R-A-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Aug 20, 2013
Detailed Description AP09N70R-A-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching ▼ Simple Dri...
Datasheet PDF File AP09N70R-A-HF PDF File

AP09N70R-A-HF
AP09N70R-A-HF

Overview
AP09N70R-A-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant G DD N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 650V 0.
75Ω 9A G SS Description AP09N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.
TO-262 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness.
G D S TO-262(R) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 650 +30 9 5 40 156 1.
25 2 Units V V A A A W W/ ℃ mJ A mJ ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 305 9 9 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.
8 62 Unit ℃/W ℃/W 1 200807314 Data & specifications subject to change without notice Free Datasheet http://www.
datasheet4u.
com/ AP09N70R-A-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage 3 Test Conditions VGS=0V, ID=1mA Min.
650 2 - Typ.
0.
6 4.
5 44 11 12 19 21 56 24 2660 170 10 Max.
Units 0.
75 4 10 500 +100 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current VGS=10V, ID=4.
5A VDS=VGS, ID...


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