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IXFT4N100Q

IXYS
Part Number IXFT4N100Q
Manufacturer IXYS
Description Power MOSFET
Published Aug 20, 2013
Detailed Description HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet S...
Datasheet PDF File IXFT4N100Q PDF File

IXFT4N100Q
IXFT4N100Q

Overview
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.
6 mm (0.
063 in) from case for 10 s Mounting torque TO-247 TO-268 IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS(on) = 1000 V = 4A = 3.
0 W trr £ 250 ns Maximum Ratings 1000 1000 ±20 ±30 4 16 4 20 700 5 150 -55 to +150 150 -55 to +150 300 1.
13/10 6 4 V V V V A A A mJ mJ V/ns W °...


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