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IXFJ13N50

IXYS
Part Number IXFJ13N50
Manufacturer IXYS
Description Power MOSFET
Published Aug 20, 2013
Detailed Description HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFJ 13N50 VDSS ID (cont) RDS(o...
Datasheet PDF File IXFJ13N50 PDF File

IXFJ13N50
IXFJ13N50

Overview
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFJ 13N50 VDSS ID (cont) RDS(on) trr = 500 = 13 = 0.
4 £ 250 V A W ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 500 500 ±20 ±30 13 52 13 18 5 180 -55 .
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+150 150 -55 .
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+150 V V V V A A A mJ V/ns W °C °C °C °C g Features • Low profile, high power package • Long creep and strike distances • Easy up-grade path for TO-220 designs •...


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