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IXFJ40N30

IXYS
Part Number IXFJ40N30
Manufacturer IXYS
Description Power MOSFET
Published Aug 20, 2013
Detailed Description HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet IXFJ 40N...
Datasheet PDF File IXFJ40N30 PDF File

IXFJ40N30
IXFJ40N30

Overview
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet IXFJ 40N30 VDSS = 300 ID25 = RDS(on) = V 40 A 80 mW trr < 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Weight Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, T J £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 300 300 ±20 ±30 40 160 40 30 5 300 -55 .
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+150 150 -55 .
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+150 V V V V A A A mJ V/ns W °C °C °C °C g Features G = Gate, S = Source, D = Drain, TAB = Drain G D S é (TAB) • Low profile, high power ...


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