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2SA1617

Hitachi Semiconductor
Part Number 2SA1617
Manufacturer Hitachi Semiconductor
Description Silicon PNP Epitaxial Transistor
Published Mar 22, 2005
Detailed Description 2SA1617 Silicon PNP Epitaxial Application High voltage amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector ...
Datasheet PDF File 2SA1617 PDF File

2SA1617
2SA1617

Overview
2SA1617 Silicon PNP Epitaxial Application High voltage amplifier Outline MPAK 3 1 2 1.
Emitter 2.
Base 3.
Collector 2SA1617 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –55 –50 –5 –100 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –55 –50 –5 — — 1 Typ — — — — — — — — Max — — — –0.
5 –0.
5 320 –0.
2 –0.
8 Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10...


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