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2SA1641

Sanyo Semicon Device
Part Number 2SA1641
Manufacturer Sanyo Semicon Device
Description PNP Epitaxial Planar Silicon Transistor
Published Mar 22, 2005
Detailed Description Ordering number:EN2926A PNP Epitaxial Planar Silicon Transistor 2SA1641 High-Current Switching Applications Features ·...
Datasheet PDF File 2SA1641 PDF File

2SA1641
2SA1641

Overview
Ordering number:EN2926A PNP Epitaxial Planar Silicon Transistor 2SA1641 High-Current Switching Applications Features · Adoption of FBET, MBIT processes.
· Low saturation voltage.
· Fast switching speed.
· Large current capacity.
· Small and slim package making it easy to make 2SA1641-used set smaller.
Package Dimensions unit:mm 2045B [2SA1641] unit:mm 2044B 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP [2SA1641] 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.
,Ltd.
Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg.
, 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82098HA (KT)/8219MO/4049MO, TS No.
2926-1/4 2SA1641 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Base Current Collector Dissipation Symbol VCBO VCEO VEBO IC ICP IB PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C Conditions Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Vol...


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