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2SA1680

Toshiba Semiconductor
Part Number 2SA1680
Manufacturer Toshiba Semiconductor
Description TRANSISTOR
Published Mar 22, 2005
Detailed Description 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1680 Power Amplifier Applications Power Switchin...
Datasheet PDF File 2SA1680 PDF File

2SA1680
2SA1680

Overview
2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • • • • Low collector-emitter saturation voltage: VCE (sat) = −0.
5 V (max) (IC = −1 A) High collector power dissipation: PC = 900 mW (Ta = 25 °C) High-speed switching: tstg = 300 ns (typ.
) Complementary to 2SC4408.
Absolute Maximum Ratings (Ta = 25°C) Characteristics S Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range ymbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −60 −50 −6 −2 −0.
2 900 150 −55 to 150 Unit V V V A A mW °C °C ...


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